? semiconductor components industries, llc, 2012 december, 2012 ? rev. 8 1 publication order number: mbrs2h100/d mbrs2h100t3g, nbrs2h100t3g, mbra2h100t3g, NRVBA2H100T3G, surface mount schottky power rectifier sma/smb power surface mount package this device employs the schottky barrier principle in a metal ? to ? silicon power rectifier. features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. features ? compact package with j ? bend leads ideal for automated handling ? highly stable oxide passivated junction ? guard ? ring for overvoltage protection ? low forward voltage drop ? nbr and nrvb prefixes for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant* mechanical characteristics ? case: molded epoxy ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: 70 mg (sma), 95 mg (smb) (approximately) ? cathode polarity band ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? esd ratings: ? machine model = c ? human body model = 3b ? device meets msl1 requirements *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sma case 403d schottky barrier rectifier 2.0 amperes, 100 volts http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. marking diagrams a210 = mbra2h100t3g NRVBA2H100T3G b210 = mbrs2h100t3g nbrs2h100t3g a = assembly location y = year ww = work week = pb ? free package a210 ayww smb case 403a ayww b210 (note: microdot may be in either location) device package shipping ? ordering information mbra2h100t3g sma (pb ? free) 5,000 / tape & reel mbrs2h100t3g smb (pb ? free) 2,500 / tape & reel NRVBA2H100T3G sma (pb ? free) 5,000 / tape & reel nbrs2h100t3g smb (pb ? free) 2,500 / tape & reel
mbrs2h100t3g, nbrs2h100t3g, mbra2h100t3g, NRVBA2H100T3G, http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (t l = 150 c) i o 2.0 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 130 a storage temperature range t stg ? 65 to +175 c operating junction temperature (note 1) t j ? 65 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? lead (note 2) mbra2h100t3g, NRVBA2H100T3G mbrs2h100t3g, nbrs2h100t3g jcl 14 12 c/w thermal resistance, junction ? to ? ambient (note 2) mbra2h100t3g, NRVBA2H100T3G mbrs2h100t3g, nbrs2h100t3g r ja 75 71 c/w thermal resistance, junction ? to ? ambient (note 3) mbra2h100t3g, NRVBA2H100T3G mbrs2h100t3g, nbrs2h100t3g r ja 275 230 c/w 2. mounted with 700 mm square copper pad size (approximately 1 inch square) 1 oz fr4 board. 3. mounted with minimum recommended pad size 1 oz fr4 board. electrical characteristics characteristic symbol value unit t j = 25 c t j = 125 c maximum instantaneous forward voltage (note 4) (i f = 2.0 a) v f 0.79 0.65 v maximum instantaneous reverse current (note 4) (v r = 100 v) i r 0.008 1.5 ma 4. pulse test: pulse width 380 s, duty cycle 2.0%.
mbrs2h100t3g, nbrs2h100t3g, mbra2h100t3g, NRVBA2H100T3G, http://onsemi.com 3 typical characteristics figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (v) v f , instantaneous forward voltage (v) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 1.5 1.3 1.1 0.9 0.7 0.5 0.3 0.1 1 10 100 figure 3. typical reverse current figure 4. maximum reverse current v r , reverse voltage (v) v r , reverse voltage (v) 90 80 60 50 30 20 10 0 0.00001 0.0001 0.001 0.01 0.1 1 10 90 80 60 50 30 20 10 0 0.001 0.01 0.1 1 10 i f , forward current (a) i f , forward current (a) i r , reverse current (ma) i r , reverse current (ma) 1.2 1.1 1.0 150 c 125 c 25 c 150 c 125 c 25 c 40 70 100 150 c 125 c 25 c 40 70 100 150 c 125 c 25 c figure 5. typical capacitance figure 6. current derating ? lead v r , reverse voltage (v) t l , lead temperature ( c) 80 70 60 50 30 20 10 0 0 50 100 150 200 300 400 450 160 130 120 110 100 0 1.0 2.0 3.0 4.0 c, capacitance (pf) i f(av) , average forward current (a) 40 90 100 250 350 t j = 25 c f = 1 mhz dc square wave 140 170 150 r jl = 14 c/w
mbrs2h100t3g, nbrs2h100t3g, mbra2h100t3g, NRVBA2H100T3G, http://onsemi.com 4 typical characteristics square wave dc dc figure 7. current derating, ambient i o , average forward current (a) 5 4 3 2 1 0 0 1 2 3 4 5 p fo , average power dissipation (w) t j = 175 c dc square wave figure 8. maximum forward power dissipation t a , ambient temperature ( c) 160 140 100 40 0 0 1.0 2.0 3.0 4.0 i f(av) , average forward current (a) r ja = 71 c/w 80 r ja = 100 c/w 0.1 0.00001 pulse time (s) 100 10 0.1 0.01 0.001 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) figure 9. thermal response, junction ? to ? ambient (1 inch pad) ? mbrs2h100t3g/nbrs2h100t3g 1.0 20 60 120 175 smb die x 1.8 mm die y 1.8 mm pcb cu area 645.2 mm 2 pcb cu thk 1.0 oz 0.1 0.00001 pulse time (s) 100 10 0.1 0.01 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) figure 10. thermal response, junction ? to ? ambient (min pad) ? mbrs2h100t3g/nbrs2h100t3g 1.0 1000 smb die x 1.8 mm die y 1.8 mm pcb cu area 11.8 mm 2 pcb cu thk 1.0 oz
mbrs2h100t3g, nbrs2h100t3g, mbra2h100t3g, NRVBA2H100T3G, http://onsemi.com 5 typical characteristics 0.1 0.00001 pulse time (s) 100 10 0.1 0.01 0.001 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) figure 11. thermal response, junction ? to ? ambient (1 inch pad) ? mbra2h100t3g/NRVBA2H100T3G 1.0 figure 12. thermal response, junction ? to ? ambient (min pad) ? mbra2h100t3g/NRVBA2H100T3G 0.1 0.00001 pulse time (s) 100 10 0.1 0.01 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) 1.0 1000 2.0 oz 1.0 oz figure 13. p d , junction ? to ? ambient (urs copper area) copper area (sq mm) 600 500 700 400 300 200 100 0 0 0.5 1.0 1.5 2.0 2.5 power dissipation (w) power based on t a = 25 c
mbrs2h100t3g, nbrs2h100t3g, mbra2h100t3g, NRVBA2H100T3G, http://onsemi.com 6 package dimensions sma case 403d ? 02 issue g dim a min nom max min millimeters 1.97 2.10 2.20 0.078 inches a1 0.05 0.10 0.20 0.002 b 1.27 1.45 1.63 0.050 c 0.15 0.28 0.41 0.006 d 2.29 2.60 2.92 0.090 e 4.06 4.32 4.57 0.160 l 0.76 1.14 1.52 0.030 0.083 0.087 0.004 0.008 0.057 0.064 0.011 0.016 0.103 0.115 0.170 0.180 0.045 0.060 nom max 4.83 5.21 5.59 0.190 0.205 0.220 h e e bd l c a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension b shall be measured within dimension l. polarity indicator optional as needed (see styles) 4.000 0.157 2.000 0.079 2.000 0.079 mm inches scale 8:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e
mbrs2h100t3g, nbrs2h100t3g, mbra2h100t3g, NRVBA2H100T3G, http://onsemi.com 7 package dimensions smb case 403a ? 03 issue j e b d c l1 l a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension b shall be measured within dimension l1. 2.261 0.089 2.743 0.108 2.159 0.085 mm inches scale 8:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max min millimeters 1.95 2.30 2.47 0.077 inches a1 0.05 0.10 0.20 0.002 b 1.96 2.03 2.20 0.077 c 0.15 0.23 0.31 0.006 d 3.30 3.56 3.95 0.130 e 4.06 4.32 4.60 0.160 l 0.76 1.02 1.60 0.030 0.091 0.097 0.004 0.008 0.080 0.087 0.009 0.012 0.140 0.156 0.170 0.181 0.040 0.063 nom max 5.21 5.44 5.60 0.205 0.214 0.220 h e 0.51 ref 0.020 ref d l1 h e polarity indicator optional as needed on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbrs2h100/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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